The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Sep. 15, 2000
Eiichi Okuno, Motosu-gun, JP;
Shinji Amano, Okazaki, JP;
Denso Corporation, Kariya, JP;
Abstract
In an accumulation mode MOSFET, a surface channel layer is disposed on a p type base region between an n type source region and an n type epi layer. The surface channel layer is composed of an n type channel layer formed on the p type base region and a p type channel layer formed on the n type channel layer. A gate insulating film is formed on the p type channel layer. A channel is formed in the n type channel layer. Accordingly, channel mobility can be improved and on-resistance can be reduced without being affected by a state of an interface between the gate insulating film and the surface channel layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile