The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Aug. 20, 2001
Applicant:
Inventors:
Takeshi Kikawa, Kodaira, JP;
Shigeo Goto, Tokorozawa, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/300 ; H01S 5/00 ; H01S 3/08 ;
U.S. Cl.
CPC ...
H01L 3/300 ; H01S 5/00 ; H01S 3/08 ;
Abstract
A semiconductor radiative device comprises a layered film comprised of a low-refraction first dielectric film and a high-refraction second dielectric film having a refraction index greater than that of the first dielectric film, and formed on at least one of facets of an optical cavity. The high-refraction second dielectric film is an amorphous dielectric film of nitrogen-doped hydrogenated silicon. The semiconductor radiative device is capable of stably operating in a high-output mode for a long period of time.