The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2002

Filed:

Aug. 13, 2000
Applicant:
Inventors:

Bradley E. Patt, Sherman Oaks, CA (US);

Jan S. Iwanczyk, Los Angeles, CA (US);

Carolyn R. Tull, Orinda, CA (US);

Gintas Vilkelis, Westlake Village, CA (US);

Assignee:

Photon Imaging, Inc., Northridge, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/714 ;
U.S. Cl.
CPC ...
H01L 2/714 ;
Abstract

A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.


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