The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Sep. 15, 2000
Azusa Yanagisawa, Tokyo, JP;
Koki Muto, Tokyo, JP;
Tadashi Nishimuro, Tokyo, JP;
Katsuo Oshima, Tokyo, JP;
Akira Watanabe, Tokyo, JP;
Akihiko Nara, Tokyo, JP;
Kouhei Shimoyama, Tokyo, JP;
Keisuke Tanaka, Tokyo, JP;
Takamitsu Furukawa, Tokyo, JP;
Shouzou Kobayashi, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
According to the present invention, a semiconductor device is fabricated by the following processes. First, a film to be etched is formed on a semiconductor substrate. On the film to be etched is formed a resist film. Then, a first pattern group including first patterns having a first size and a second pattern group including second patterns arranged outside of the first pattern group are formed by exposure. The resist film is then developed to form openings in the resist film so that the resultant openings correspond to the first and second patterns, respectively. The openings are then made smaller by annealing the resist film. The aforementioned processes enables openings having substantially the same shape to be formed in the film to be etched.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile