The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Dec. 30, 1999
Gorley L. Lau, Fremont, CA (US);
Cypress Semiconductor Corp., San Jose, CA (US);
Abstract
A metallization structure and method for fabricating such a metallization structure are presented. The present method preferably includes forming a void within a metal layer. The void may have a void pressure level, which is preferably approximately equal to the pressure in a deposition chamber in which the metal layer is arranged when the void is formed. Subsequently, the void may be collapsed by increasing a pressure level outside of the void to a collapsing pressure level significantly above the void pressure level. Increasing a pressure level outside of the void preferably includes increasing a pressure level within the deposition chamber to a collapsing pressure sufficient to collapse the void. A metallization structure formed by such a process may be substantially void-free, even in narrow, high aspect ratio metallization cavities.