The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Jul. 31, 2000
Applicant:
Inventors:
Toshio Itoh, Palo Alto, CA (US);
Michael X. Yang, Fremont, CA (US);
Christophe Marcadal, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/14763 ; H01L 2/131 ; H01L 2/1409 ; H01L 2/126 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/14763 ; H01L 2/131 ; H01L 2/1409 ; H01L 2/126 ;
Abstract
A method of forming tantalum nitride (TaN) compound layers for use in integrated circuit fabrication processes is disclosed. The tantalum nitride (TaN) compound layer is formed by thermally decomposing a tantalum containing metal organic precursor. After the tantalum nitride (TaN) compound layer is formed, it is plasma treated.