The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Jun. 02, 1999
Jean-Michel Mirabel, Cabries, FR;
STMicroelectronics S.A., Gentilly, FR;
Abstract
The present invention relates to a method of manufacturing integrated circuits including high and low voltage MOS transistors. This method includes steps of forming insulated gate structure forming lightly-doped drain/source regions, depositing an insulating layer; forming a mask above the gates of the high voltage transistors which extends laterally beyond said gates; etching the insulating layer to leave spacers on the edges of the low voltage transistor gates; implanting a dopant adapted to forming heavily-doped drain/source contact regions of the high and low voltage transistors; and forming in a self-aligned way a metal silicide layer on the drain/source contact regions of all transistors, as well as on the gate contacts of the low voltage transistors.