The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Apr. 29, 1999
Applicant:
Inventor:
Ming-Kwei Lee, Kaohsiung, TW;
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/715 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/715 ;
Abstract
A high gain and low leakage current porous silicon metal-semiconductor-metal planar photodetector was fabricated through rapid thermal oxidation (RTO) and rapid thermal annealing (RTA). A high responsivity of 2.15 A/W can be obtained under a 0.85 mW 675 nm laser diode illumination. The gain is 400%. It shows high potential as a device applied in optoelectronics and optoelectronic integrated circuits.