The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Feb. 12, 2001
Applicant:
Inventors:
Harald Bachhofer, Munich, DE;
Walter Hartner, Glen Allen, VA (US);
Guenther Schindler, Munich, DE;
Thomas Peter Haneder, Munich, DE;
Wolfgang Hoenlein, Unterhaching, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
The crystallization temperature of a ferroelectric layer ( ) (dielectric) for a storage capacitor can be lowered by applying a very thin (CeO layer ( ) to a first platinum electrode layer ( ) of the storage capacitor before the ferroelectric layer is deposited. The dielectric layer ( ) deposited in amorphous state is then crystallized by a temperature treatment step at a temperature in the range between 590° C. and 620° C. A second electrode layer ( ) is then applied to complete the storage capacitor.