The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Jul. 30, 2001
Euy Sik Yoon, Anyang-shi, KR;
Hong Jun Jun, Anyang-shi, KR;
Ki Chul Shin, Anyang-shi, KR;
Jun Seok Song, Anyang-shi, KR;
Bon Jo Koo, Anyang-shi, KR;
Ho Sung Lee, Anyang-shi, KR;
LG. Cable & Machinery, Ltd., Seoul, KR;
Abstract
An optical structure and a method of manufacturing a laser diode chip. The optical structure includes a silicon substrate, an optical fiber fixed to that substrate, and a laser diode chip. Grooves are formed in the optical fiber and the laser diode chip. Those grooves are used for aligning and positioning the optical fiber relative to the laser diode chip. The laser diode chip is manufactured by vapor-depositing a nitride thin film (Si N ) on a laminated wafer comprised of n-type InP layers, p-type Inp layers, and InGaAs layer. Then, etching an InGaAs layer using a solution of sulfuric acid, hydrogen peroxide, and distilled water after opening an etching window to form a V-mesa and V-grooves; etching an InP layer using a hydrochloric acid solution; vapor-depositing a nitride thin film (SiNx), opening an electrode forming window to form electrodes on the wafer, and forming p-type and n-type electrodes the wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile