The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Oct. 11, 2000
Michael G. Ressl, Western Springs, IL (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
The switching system with MEMS modification of a signal wavefront implements a new type of all-optical signal switching element that uses the coherence properties of electromagnetic radiation, coupled with the materials properties of semiconductors through the application of existing Micro-machined Electro-Mechanical System (MEMS) technology to provide signal switching apparatus that is faster in operation, smaller in size, more robust, and less expensive than existing signal switching elements found in all-optical communication switching systems. This is accomplished by the use of a semiconductor chip that has a MEMS mirror system implemented on its face. The MEMS device is constructed to operate in a pure materials flex mode, with no moving mechanical parts to wear. The MEMS mirror system is used to create local distortions in the reflected and/or transmitted electromagnetic radiation wavefront to redirect the electromagnetic radiation in such a way as to create channels of changed resistance in a bulk semiconductor. These changes in resistance to the channels serve to enhance or impede the motility of electrons through the bulk semiconductor, thereby providing a switching function within the bulk semiconductor. Alternatively, the redirection of the electromagnetic radiation wavefront can be effected via changes in the index of refraction in the bulk semiconductor material.