The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Jan. 22, 2001
Oskar Kowarik, Neubiberg, DE;
Kurt Hoffmann, Taufkirchen, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A memory configuration includes a plurality of resistive ferroelectric memory cells. Each of the memory cells includes a selection transistor and a storage capacitor. The selection transistor has a given zone of a first conductivity type. The storage capacitor has a first and a second electrode. The first electrode is supplied with a fixed cell plate voltage, the second electrode is connected to the given zone of the first conductivity type. A source and a drain of a MOS transistor are supplied with the fixed cell plate voltage. The channel of the MOS transistor has a channel length extending over at least two of the memory cells. The given zone of the first conductivity type is connected, via a resistor, to the channel of the MOS transistor such that the given zone is electrically connected to the first electrode of the storage capacitor via the resistor and the MOS transistor.