The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Apr. 04, 2001
Jeon-Sig Lim, Gyeonggi-do, KR;
Jin-Ho Jeon, Seoul, KR;
Jong-Seung Yi, Gyeonggi-do, KR;
Chul-Hwan Choi, Seoul, KR;
Abstract
In a process for mitigating and/or eliminating the abnormal growth of underlying polysilicon in dichloro silane-based CVD polycide WSix films, a first technique conducts the deposition of the underlying polysilicon layer at a temperature that substantially avoids crystallization of the underlying polysilicon. A second approach reduces the exposure (for example time period and or concentration) of the mono-silane SiH post flush, so as to avoid infusion of silicon into the underlying polysilicon layer, and resulting abnormal growth. In this manner, abnormal effects, such as stress fractures formed in subsequent layers, can be eliminated.