The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Oct. 19, 2000
Nobuhisa Kumamoto, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
In the case of providing a contact hole ( ) in an insulting film ( ) on the substrate ( ), and forming a wiring on the insulting film to be connected to an exposed portion by the contact hole, a tin film ( ) is formed on a location where the wiring is formed, and a paradium film ( ) is formed on a location where the wiring is formed by immersing a portion where the tin film is provided in a solution containing a paradium ion (Pd ). Then, the paradium film is used as a reaction start layer to form a copper film ( ) by the electroless plating method. Furthermore, a second copper film may be formed by the electroplating by using the copper film as the feeder layer. By doing so, there is provided a semiconductor device wherein the diffusion of elements of the reaction start layer (the seed layer) into the film is prevented, a copper film having a small specific resistance and excellent conductivity formed with good reliability, and a higher integration can be provided with further fine wiring.