The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Jun. 09, 2000
Applicant:
Inventors:
Yi Ma, Orlando, FL (US);
Yih-Feng Chyan, Orlando, FL (US);
Chung Wai Leung, Orlando, FL (US);
Jane Qian Liu, Orlando, FL (US);
Timothy Scott Campbell, Gotha, FL (US);
Assignee:
Agere Systems Guardian Corp., Allentown, PA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1331 ;
Abstract
A bipolar device ( ) includes an oxide layer ( ) which is grown on the surface ( ) of a semiconductor substrate ( ) by immersing the surface in ozonated deionized water. By selecting an appropriate temperature of the water and concentration of the ozone, the thickness of the film can be maintained within fine tolerances from lot to lot, and over the surface of a wafer (W) comprising the substrate.