The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Aug. 08, 2001
Takashi Kono, Hyogo, JP;
Yuichiro Komiya, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor memory device has a half Vdds generating circuit. The half Vdds generating circuit includes reference voltage generating circuits, a selecting circuit, and a driver circuit. In a normal mode, the driver circuit receives voltages Vnd1 and Vpd1 obtained by dividing an array operation voltage Vdds from the reference voltage generating circuit and outputs a precharge voltage Vb1 from an output node. In a test mode, the driver circuit receives voltages Vnd2 and Vpd2 obtained by dividing the voltage Vddp from the reference-voltage generating circuit, and outputs a precharge voltage Vb1 from the output node. As a result, a voltage as a reference used to generate an intermediate voltage can be switched between the normal mode and the test mode.