The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2002

Filed:

Mar. 03, 2000
Applicant:
Inventor:

Kenji Uchiyama, Hotaka-machi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract

A semiconductor device, a mounting structure thereof, a liquid crystal device, and an electronic apparatus having an improved bump electrode structure, such that the bump electrodes and corresponding electrode terminals can be electrically connected through an anisotropic conductive film without compromising, or causing deterioration of, the electrical characteristics or reliability of the device, even when the bump electrodes are formed with a narrow pitch. Since the bump electrodes of the semiconductor device are tapered inward from top to bottom, the base portions of adjacent bump electrodes are spaced apart from each other by wider gaps than the corresponding upper portions. Thus, a large number of conductive particles in the conductive film do not gather between adjacent bump electrodes to cause short-circuiting therebetween. Further, since the upper portions of the bump electrodes are wider and the opposing surface areas of both the bump electrodes and the electrode terminals are relatively large, a large number of conductive particles are distributed between the bump electrodes and the electrode terminals. This ensures that the bump electrodes and the electrode terminals are electrically connected in a satisfactory manner. Therefore, with this arrangement, a high level of reliability can be achieved, even when the bump electrodes are formed in high density.


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