The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Mar. 16, 2001
Zia Hossain, Tempe, AZ (US);
Evgueniy N. Stefanov, Vieille Toulouse, FR;
Mohammed Tanvir Quddus, Tempe, AZ (US);
Joe Fulton, Chandler, AZ (US);
Mohamed Imam, Tempe, AZ (US);
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Abstract
A high voltage MOS device ( ) is disclosed. The MOS device comprises an n-well region ( ) with two areas. The first area ( ) has a high dopant concentration and the second area ( ) has a low dopant concentration. Inside the well region a region of a secondary conductivity type ( ) is formed. The second area ( ) is typically underlying a gate ( ). The lower doping concentration in that area helps to increase the breakdown voltage when the device is blocking voltage and helps to decrease on-resistance when the device is in the “on” state.