The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Aug. 14, 2001
Applicant:
Inventors:
Prasanth Perugupalli, Tempe, AZ (US);
Gary Lopes, Palos Verdes, CA (US);
Assignee:
Telefonaktiebolaget LM Ericsson, Stockholm, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract
A power transistor according to one embodiment of the invention includes a plurality of transistor elements located on a single semiconductor die, each transistor element comprising one or more transistors coupled to a common gate terminal for the respective transistor element. A resistor network couples the transistor element gate terminals between a bias voltage and a reference ground, with resistors in the network sized such that such that a first transistor element is biased in a first, e.g., class A, operating condition, and a second transistor element is biased in a second, e.g., class AB operating condition.