Single-wafer process chamber thermal convection processes

Abstract

A thermal processing chamber configured to enclose and heat treat a single electronic substrate at an exposed surface, such as a wafer or electronic circuit board being re-melted, includes an enclosed gas tight and particle free heat insulated chamber. An electronic substrate support is placed within the enclosed gas tight and particle free heat insulated chamber. A convection gas inlet distribution manifold adjustable in spatial relation towards and away from the surface to be treated provides a flow of heated gas over and onto the exposed surface of the electronic substrate to be treated. A heated convection gas outlet is placed below the electronic substrate for the collection of heated gas after flowing over, around and below the exposed surface of the electronic substrate to be treated. A door is movable between and open and closed position. The door opens a path to move the electronic substrate into and out of the chamber to and from the electronic substrate support in an open position. The door has a gas-tight seal with respect to the chamber when in the closed position. A heater having an inlet for receiving gas, and an outlet for discharging heated gas provides heated gas for the convection treatment. A heat exchanger receives gas from the convention gas outlet and discharges gas to the heater inlet to enable heat recovery from the gas discharged from the convention gas outlet and to simultaneously enable precise temperature control. Provision is made for disposing individual ovens in juxtaposition to enable multiple substrates to be processed simultaneously.