The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Apr. 13, 2000
Applicant:
Inventors:
Assignee:
STMicroelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract
A process of fabricating a floating-gate memory device, the process including the steps of: forming a stack of superimposed layers including a floating gate region, a dielectric region, and a control gate region; and forming an insulating layer of oxynitride to the side of the floating gate region to completely seal the floating gate region outwards and improve the retention characteristics of the memory device. The insulating layer is formed during reoxidation of the sides of the floating gate region, after self-align etching the stack of layers and implanting the source/drain of the cell.