The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Aug. 29, 2001
Applicant:
Inventor:
Myoung-Soo Kim, Suwon, KR;
Assignee:
Samsung Electronics Co. Ltd., , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract
Disclosed is a method of selectively forming a silicide film of merged DRAM logic by which active regions of a logic side are entirely changed into a silicidation state without adding a separate photoresist patterning process even though there exist any regions in which the space between gates is somewhat narrower than in a DRAM cell forming region, and an etch stopper film of SiON material that is needed in the formation of deep contacts can be applied to a MDL process having dual gate in mass production.