The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Nov. 22, 2000
Applicant:
Inventor:
Steffen Sterk, Munich, DE;
Assignee:
Siemens and Shell Solar GmbH, , NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method for doping one side of a semiconductor substrate, such as in a silicon wafer, wherein an oxide layer is deposited on both the side to be doped and the non-doped side of the semiconductor substrate. A doping layer, containing a doping agent, is deposited onto the oxide layer on the side to be doped. The doping agent passes through the oxide layer on the side to be doped and into the semiconductor substrate. The oxide layer on the non-doped side serves as a protective layer, preventing diffusion of the doping agent into the undoped side of the substrate.