The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Nov. 08, 2000
David Alan Ackerman, Hopewell, NJ (US);
Lynn Frances Schneemeyer, Westfield, NJ (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
The specification describes stepped etalon structures and techniques for their fabrication. The preferred etalon material is LiCaAlF , which is not efficiently processed using reactive ion etching. The approach of the invention is to produce the steps on the etalon by depositing a blanket layer of step material that is effectively etched by RIE, masking a portion of the step material, and etching the masked blanket layer using the LiCaAlF substrate as an etch stop. These process steps may be repeated to form multiple steps on the etalon. Etalon structures with steps on both major surfaces are described, as well as etalon structures with steps having differing areas. In the latter case a difference in amplitude in the output signal from a single detector can be used to identify the step that is resonating.