The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Feb. 29, 2000
Satoru Miyamoto, Mobara, JP;
Kazunari Noguchi, Mobara, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A cathode ray tube includes an electron gun having a cathode, first and second grid electrodes, plural focus electrodes and an anode electrode fixed by two glass beads; a voltage-dividing resistor attached to one glass bead for producing an intermediate voltage applied to a first one of the plural focus electrodes adjacent to the anode electrode by dividing an anode voltage and a metal conductor attached to one of electrodes of the electron gun disposed upstream of the first one of the plural focus electrodes to surround the voltage-dividing resistor and the glass bead. The voltage-dividing resistor includes an overcoat insulating film, a resistance element and an insulating substrate stacked in the order named from the overcoat insulating film facing the glass bead, and the resistance element includes first-type resistance-forming regions disposed on opposite sides of the metal conductor and a second-type resistance-forming region containing a portion thereof facing the metal conductor. The resistance element in the first-type resistance-forming regions extends meanderingly in a direction of a tube axis, and the resistance element in the second-type resistance-forming region is configured such that minimum distances L1 and L2 between the resistance element and two long sides of the insulating substrate, respectively, are larger than corresponding minimum distances between the resistance element and two long sides of the insulating substrate in the first-type resistance-forming regions.