The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Aug. 10, 2000
Tatjana Traijkovic, Cambridge, GB;
Florin Udrea, Cambridge, GB;
Gehan Anil Joseph Amaratunga, Cambridge, GB;
Dynex Semiconductor Limited, Lincoln, GB;
Abstract
A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region ( ) of a first semiconductor type. The voltage termination structure comprises at least one first termination region ( ) of a second semiconductor type, the or each first termination region having at least one of either second and third termination regions ( ) of third and fourth semiconductor types located at substantially opposing edges thereof. The second and third termination regions ( ) respectively have a higher semiconductor doping concentration than the edge portion substrate region ( ) and a lower semiconductor doping concentration than the first termination region(s) ( ).