The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Apr. 13, 2000
Applicant:
Inventor:
Kazunori Taguchi, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/974 ; H01L 3/1111 ; H01L 2/334 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/974 ; H01L 3/1111 ; H01L 2/334 ; H01L 2/348 ;
Abstract
A first cathode flange ( ) provided with branch-like protrusions ( ) extending towards substantially its outer periphery and a gate flange ( ) provided with branch-like protrusions ( ) extending towards substantially its outer periphery are connected to a cathode electrode ( ) and a gate electrode ( ), respectively, formed on one surface of a gate drive substrate ( ). With this structure, a gate commutated turn-off semiconductor device which eliminates the necessity of a gate spacer and a cathode spacer and allows reduction in time and cost required for manufacture can be achieved.