The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2002

Filed:

Nov. 21, 2000
Applicant:
Inventors:

Byung Hee Cho, Ichon, KR;

Noh Yeal Kwak, Ichon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract

There is disclosed a method of manufacturing a flash memory device. In order to solve the problems that a break down voltage between wells is reduced and an insulating characteristic between the wells is lowered due to degraded barrier characteristic between the wells, in a flash memory device employing a triple well structure, the present invention forms an anti-diffusion region for preventing diffusion of dopants between a P-well region and a N-well region by nitrogen ion implantation, thus improving the electrical characteristic of the device.


Find Patent Forward Citations

Cho, Byung. (2002). Method of manufacturing a flash memory device with an antidiffusion region between well regions (U.S. Patent No. 6444522). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6444522

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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