The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Apr. 10, 2000
Isao Kidoguchi, Kawanishi, JP;
Hideto Adachi, Ibaraki, JP;
Masaya Mannoh, Nara, JP;
Toshiya Fukuhisa, Ibaraki, JP;
Akira Takamori, Suita, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
An n-type GaAs buffer layer an n-type AlGaInP cladding layer a multiple quantum well active layer made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer an optical guide layer a second p-type cladding layer a p-type GaInP saturable absorption layer and a third p-type AlGaInP cladding layer are sequentially formed on an n-type GaAs substrate In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.