Fabrication of improved low-k dielectric structures

Abstract

Fabrication of improved low-k dielectric structures is disclosed. Low-k dielectric structures are fabricated while overcoming the otherwise existing problems associated with the use of low-k dielectric materials. In one embodiment, the physical properties of a low-k dielectric material is modified by exposing the low-k dielectric material to electron beams. The exposed portion of the low-k dielectric material becomes easier to etch and clean and exhibits greater mechanical strength and a reduction in absorption of moisture. In another embodiment, a number of incremental exposure and etch steps are performed to fabricate a desired structure. In yet another embodiment, the steps of exposure of a low-k dielectric material are combined with the etch steps. The exposure and the etching of the low-k dielectric material are performed concurrently in the same system. In still another embodiment, a single exposure and a single etch step are utilized to fabricate a desired structure. All the disclosed embodiments can be practiced by exposing the low-k dielectric material to ion beams instead of electron beams.