The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Jun. 28, 2000
Yasushi Kameda, Kanagawa-ken, JP;
Makoto Segawa, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device has an internal circuit ( ), a PAD, a NMOS Tr (QN) as a protective transistor formed between a node (N) on a signal line and a first power source (Vss), and a NOR gate (G ) as a logical gate connected to a gate as a control terminal of the NMOS transistor (QN). The internal circuit ( ) is connected to the PAD through the signal line. The NOR gate (G ) keeps the protective transistor (QN) an OFF state during a normal operation of the internal circuit ( ). In addition, the semiconductor device further includes a test circuit ( ). The output from the NOR gate (G ), whose one input is the output from the test circuit ( ), is supplied to the gate of the NMOS transistor (QN). The output from the test circuit ( ) is thereby output to outside through the NMOS transistor (QN) and the PAD.