The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Oct. 31, 2001
George M. Braceras, Essex Junction, VT (US);
Patrick R. Hansen, Mansfield, MA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and method for reducing bipolar current in of a SOI circuit by alternating precharge low and precharge high methodologies comprises a reset signal source coupled to an inverter and a primary node, further coupled to a first and second PFET device; a clock signal source; coupled to a first NFET device and a third PFET device; a first input signal source coupled to a second NFET device and a fourth PFET device; a first NFET stack node coupled to the third PFET device, the first NFET device, the primary node, and the second NFET device; a second input signal source coupled to a third NFET device; a fifth PFET device coupled to the fourth PFET device; a power supply voltage source coupled to the fifth PFET device; and a second NFET node coupled to the fourth PFET device, the second NFET device, and the third NFET device.