The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Jan. 09, 2001
Yukio Yasuda, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Latch-up of each of parasitic thyristors (T -T ), which occurs when a circuit element (B ) is formed on a semiconductor substrate in which an IGBT (Z ) has been formed, is prevented by a circuit for preventing the latch-up using Schottky barrier diodes (D , D ) formed on the semiconductor substrate. Each of the Schottky barrier diodes (D , D ), which is composed of a junction between a diffused layer used for forming the circuit element and a metal wiring layer, is used in the circuit for preventing the latch-up action of each of the parasitic thyristors (T -T ). Thereby, the area of the semiconductor device can be made smaller while the semiconductor device can have a higher protection effect.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile