The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Jul. 14, 1999
Naoki Tsuji, Tokyo, JP;
Kiyoteru Kobayashi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Providing a method of producing a semiconductor device and a structure of the semiconductor device employing a trench isolation structure for isolating semiconductor elements wherein volumetric expansion of a trench-filling material due to oxidation process after forming the trench isolation structure is controlled thereby making it possible to prevent deterioration of the electrical characteristics of the semiconductor device. A nitriding treatment is applied to the trench surface of the silicon substrate after forming the trench by etching, thereby to form a thin nitride layer having a better effect of preventing oxidation in the interface of silicon.