The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Dec. 10, 1996
Applicant:
Inventor:
Kakutaro Suda, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
In a semiconductor device having a bipolar transistor and a MOS transistor on a same semiconductor substrate, a gate electrode of MOS transistor is formed of a first gate electrode layer on a gate oxide film and a second gate electrode layer formed on the first gate electrode layer. Nitrogen is introduced into the first gate electrode layer, and is aggregated around the interface with the gate oxide film. Arsenic is implanted into a second gate electrode layer, and diffused into the second gate electrode layer. An emitter electrode of a bipolar transistor is formed of the same layer with the second gate electrode layer, but nitrogen is not introduced.