The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Aug. 28, 2001
Keiji Hayashi, Fukuyama, JP;
Masayuki Nagata, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A process for fabricating a semiconductor device including MOS transistors of low breakdown voltage type and of high breakdown voltage type provided on a semiconductor substrate, the MOS transistor of high breakdown voltage type being operative at a higher voltage than the MOS transistor of low breakdown voltage type and having drift diffusion regions, the process comprises the steps of: forming a LOCOS oxide film on the semiconductor substrate; and performing ion implantation with the use of a single mask having openings respectively defining on the substrate a first region for formation of a first conductivity type MOS transistor of low breakdown voltage type, a second region in which the LOCOS oxide film is formed for isolation of a first conductivity type MOS transistor of high breakdown voltage type, and a third region for formation of a drift diffusion region of a second conductivity type MOS transistor of high breakdown voltage type, so that the first and third regions each have at least two concentration peaks of implanted ions at different depths in the semiconductor substrate, and the second region has a concentration peak of implanted ions in the vicinity of an interface between the LOCOS oxide film and the semiconductor substrate.