The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Mar. 30, 2001
Kuo-Tung Sung, Hsinchu, TW;
Mosel Vitelic, Inc., Hsinchu, TW;
Abstract
A dual-gate cell structure with self-aligned gates. A polysilicon spacer forms a second gate ( ) separated from a first gate ( ), which is also polysilicon, by a dielectric layer ( ). A drain region ( ) and a source region ( ) are formed next to the gates within a shallower well. The shallower well is positioned above a deep well region. In one embodiment, the second gate ( ) acts as a floating gate in a flash cell. The floating gate may be programmed and erased by the application of appropriate voltage levels to the first gate ( ), source ( ), and/or drain ( ). The self-aligned nature of the second gate ( ) to the first gate ( ) allows a very small dual-gate cell to be formed.