The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Nov. 01, 2000
Applicant:
Inventors:
Darlene Hamilton, San Jose, CA (US);
Len Toyoshiba, San Jose, CA (US);
Michael Fliesler, Santa Cruz, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
A method of manufacturing a flash memory semiconductor device that eliminates the step of forming sidewall spacers on n-channel and p-channel transistor gate structures. Resist spacers having a dimension of G +2S are formed on n-channel transistor gate structures and an N implant is performed to form N implant is performed to form N regions in the n-channel substrate region. Resist spacers having a dimension of G +2S are formed on p-channel transistor gate structures and a P implant is performed to form P regions in the p-channel substrate region.