The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Dec. 13, 2000
Applicant:
Inventors:
J. Leon Shohet, Madison, WI (US);
Cristian Cismaru, Tustin, CA (US);
Francesco Cerrina, Madison, WI (US);
Assignee:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/120 ; H01L 2/126 ; H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/120 ; H01L 2/126 ; H01L 2/131 ;
Abstract
A method and apparatus for reducing plasma-induced charging damage in a semiconducting device are provided. The method includes exposing an article having a dielectric material susceptible to plasma-induced charging, to vacuum-ultraviolet (VUV) radiation of an energy greater than the bandgap energy of the dielectric material during or after plasma processing of the device. The plasma-induced charge is conducted from, or recombined at, the charging site.