The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Apr. 26, 2001
Applicant:
Inventors:
Shinichiro Hayashi, Colorado Springs, CO (US);
Tatsuo Otsuki, Osaka, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by carefully controlled drying, soft baking, and annealing conditions.
Hayashi, Shinichiro. (2002). Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures (U.S. Patent No. 6440754). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6440754
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile