The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2002

Filed:

Oct. 31, 2000
Applicant:
Inventors:

Daniel E. Sutton, Austin, TX (US);

Christopher H. Lansford, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ; G06K 9/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ; G03C 5/00 ; G06K 9/00 ;
Abstract

Various methods of inspecting a semiconductor workpiece for defects are provided. In one aspect, a method of inspecting a surface of a semiconductor workpiece for defects is provided that includes applying a negative-tone photoresist film to the surface and baking the negative-tone photoresist film to release solvent therefrom and to facilitate release of catalyzing substances held by the defects into the negative-tone photoresist film. The catalyzing substances react chemically with at least one moiety of the photoresist film to thereby lower the solubility of one or more portions of the negative-tone photoresist film in a developer. The negative-tone photoresist film is developed with the developer and the surface is inspected for the portions of the negative-tone photoresist film remaining after the developing process. The remaining portions of the negative-tone photoresist film are indicative of the locations of the defects.


Find Patent Forward Citations

Loading…