The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2002
Filed:
Feb. 05, 2001
Applicant:
Inventor:
Guy Lefranc, Müchen, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 1/504 ;
U.S. Cl.
CPC ...
B32B 1/504 ;
Abstract
The substrate for high-voltage modules has a ceramic later with a first main side and a second main side opposite to the first main side. The ceramic layer has a first dielectric constant. A top metal layer is disposed on the first main side and a bottom metal layer is disposed on the second main side. To reduce field tips, a dielectric layer with a second dielectric constant borders the top metal layer and is disposed on the first main side of the ceramic layer. The density of the field lines on the edges of the voltage-conducting elements is thus attenuated so that the dielectric constants of the ceramic layer and the dielectric layer match each other.