The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Oct. 12, 2000
Applicant:
Inventors:
Phong Chau, San Jose, CA (US);
Mustafa Pinarbasi, Morgan Hill, CA (US);
Hua A. Zeng, San Jose, CA (US);
Patrick Rush Webb, San Jose, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 ;
U.S. Cl.
CPC ...
G11B 5/39 ;
Abstract
A top spin valve sensor includes an iridium manganese (IrMn) pinning layer which has been formed by ion beam sputter deposition. The magnetoresistive coefficient of the spin valve sensor is increased by employing an iridium manganese oxide (IrMnO) seed layer between a free layer of the spin valve sensor and a first read gap layer of the read head. The free layer is preferably a nickel iron free film located between first and second cobalt iron (CoFe) free films.