The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Apr. 23, 1999
Applicant:
Inventor:
Philip John Cacharelis, Menlo Park, CA (US);
Assignee:
National Semiconductor Company, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 ; G02F 1/136 ;
U.S. Cl.
CPC ...
G02F 1/1343 ; G02F 1/136 ;
Abstract
A liquid crystal on silicon (LCOS) display pixel with dual storage capacitors for increasing the storage capacitance of the charge storage node for the liquid crystal pixel. The two capacitors are in a stacked arrangement. The bottom capacitor is formed by using a buried diffusion layer as the bottom electrode, a first layer of polysilicon (poly) as the top electrode and silicon dioxide as the dielectric. The top capacitor is a poly-to-poly capacitor formed by using the first layer of poly as the bottom electrode and a second layer of poly as the top electrode.