The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Nov. 19, 1998
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor circuit includes an amplifying circuit and compensates the distortion characteristic in the event of changes in the ambient temperature. If the amplifying circuit is a field effect transistor (FET) amplifying circuit having a grounded source, a compensating circuit in which a thermistor having a negative temperature characteristic and a thermistor having a positive temperature characteristic are connected in a series is provided between the grounding point and the source of the FET to compensate distortion of signals outputted from the FET that is caused by the ambient temperature. The temperature at which distortion is considered a minimum is taken as the reference temperature, and the drain current that flows at this reference temperature is made a minimum such that the drain current increases as the ambient temperature deviates from the reference temperature, thereby suppressing or preventing increase in distortion in the event of changes in the ambient temperature.