Non-volatile semiconductor memory device with reduced line resistance and method of manufacturing

Abstract

To provide a non-volatile semiconductor memory device in which the word line resistance can be decreased in resistance without being accompanied by increase in chip area, and a manufacturing method for the non-volatile semi conductor memory device. In a non-volatile semiconductor memory device having a floating gate ( of FIG. ) and a control gate ( of FIG. ), a contact groove ( of FIG. ) extending in the direction of a word line ( of FIG. ) is provided on an interlayer insulating film ( of FIG. ) formed as an upper layer of the control gate, and an electrically conductive member of, for example, tungsten, is embedded in the contact groove to establish electrical connection between the wiring metal ( of FIG. ) formed as an upper layer of the interlayer insulating film and the control gate with a large contact area.