The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Mar. 16, 2000
Ki-Young Oh, Chungcheongbuk-do, KR;
Hynix Semiconductor Inc., Kyoungki-Do, KR;
Abstract
The present invention relates to a capacitor for semiconductor devices which prevents the resistance between a lower electrode and a plug therein from increasing due to oxidation. The present invention includes a semiconductor substrate, an insulating interlayer (having an elevated region) on the semiconductor substrate wherein a contact hole is formed in the elevated region of the insulating interlayer, a plug filling up the contact hole so as to be in contact with the semiconductor substrate, an adhesive layer on the insulating interlayer and in contacted with the plug, a first barrier layer on a top surface of the adhesive layer and a second barrier layer at sides of the elevated region of the adhesive layer, a first lower electrode on the first barrier layer, a second lower electrode at sides of the first and second barrier layers and the insulating interlayer, a dielectric layer on the first and second lower electrodes, and an upper electrode on the dielectric layer.