The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Mar. 16, 2001
Applicant:
Inventor:
Asamira Suzuki, Tokyo, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10304 ;
U.S. Cl.
CPC ...
H01L 3/10304 ;
Abstract
An avalanche photodiode (APD) of the present invention uses a distortion-compensated superlattice multiplication layer ( ) for the superlattice multiplication layer. It also uses a multi-layered light-reflecting layer as the light-reflecting layer. This structure of the present invention makes it possible to reduce a layer thickness of the superlattice multiplication layer without decreasing an electron multiplication factor and increasing a dark current. Accordingly, the APD of the present invention shows high response and low operating voltage, while it also maintains low dark current, low noise and broad band at the same time.