The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Apr. 30, 2001
Bernd Göbel, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A depression is produced in a substrate for a capacitor of a memory cell of the DRAM cell configuration. An insulation and a storage node of the capacitor are produced in the depression. A spacer made of silicon is produced above the storage node. A first part of the spacer is doped by inclined implantation. The spacer is patterned by utilizing the different doping of the first part of the spacer. With the aid of the patterned spacer as a mask, the storage node and the insulation are altered in such a way that the storage node directly adjoins the substrate only in a limited patch of a sidewall of the depression and is otherwise isolated from the substrate by the insulation.