The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Apr. 11, 2001
Adam R. Brown, Eindhoven, NL;
Godefridus A. M. Hurkx, Eindhoven, NL;
Wiebe B. De Boer, Eindhoven, NL;
Jan W. Slotboom, Eindhoven, NL;
Koninklijke Philips Electronics N.V., New York, NY (US);
Abstract
A semiconductor device with a tunnel diode comprises two mutually adjoining semiconductor regions ( ) of opposed conductivity types having high enough doping concentrations to provide a tunneling junction. Portions ( A, A) of the semiconductor regions adjoining the junction comprise a mixed crystal of silicon and germanium. The doping concentration of both phosphorus and boron are substantially increased, given the same amount of dopants being offered as during the formation of the remainder of the regions. The tunneling efficiency is substantially improved, and also because of the reduced bandgap of said portions ( A, A). A much steeper current-voltage characteristic both in the forward and in the reverse direction is achieved. Thus, the tunneling pn junction can be used as a transition between two conventional diodes which are stacked one on the other and formed in a single epitaxial growing process. The doping concentration may be 6×10 or even more than 10 at/cm . A simple method of manufacturing such a device is preferably done at a temperature between 550° C. and 800° C.